2017 | AFC ACCOMPLISHMENTS 147 Figure 2. The temperature dependence of the heat capacity of U3Si2. The dotted line marks the theoretical Dulong-Petit value. Inset: the low temperature part of the heat capacity of U3Si2. Figure 3. The temperature variation of the thermal conductivity of U3Si2. The dashed line is the electronic component while the dotted line represents the lattice part of the thermal conductivity of U3Si2. Inset: the thermal conductivity of U3Si2 from 2 up to 1800 K. this material.The electrical resistivity is reduced with lowering temperature, characteristic of metals (see Figure 1). Also the magnitude and temperature dependences of Hall and Seebeck effect are typical for correlated metals. The low temperature heat capacity is enhanced and shows an upturn in Cp/T (T), characteristic of spin fluctuations (see Figure 2).The thermal conductivity of U3Si2 is ~8.5 W/m-K at room temperature and we show that the lattice part of the total thermal conductivity is small, with electrons dominating heat transport above 300 K (see Figure 3).As shown in the inset of Figure 3, at about room temperature the results are very close to previous high temperature studies, and the trends with respect to increasing temperature are nearly identical. In this inset we also include a high temperature laser-flash measurements performed on the same samples as used in the low temperature studies and previous laser flash measurements performed at Los Alamos National Laboratory (LANL) byWhite at al [J.T.White et al.,"Corrigendum to “Thermophysical properties of U3Si2 to 1773 K, J. Nucl. Mater. 484 (2017) 386–387].This knowledge of the details of the heat transport in U3Si2 will be useful for researchers working on modeling and simulations of this new advanced fuel. Figure 1. The temperature dependence of the electrical resistivity of U3Si2. The inset shows the tetragonal unit cell of U3Si2.